A novel algorithmic method for piezoresistance calculation  

作　　者：洪应平 梁庭 葛冰儿 王伟 郑庭丽 李赛男 熊继军 

机构地区：[1]Key Laboratory of Instrumentation Science & Dynamic Measurement (North University of China),Ministry of Education [2]Ministry of Education and Science Technology on Electronic Test & Measurement Laboratory, Department of ElectronicScience and technology, North University of China

出　　处：《Journal of Semiconductors》2014年第5期60-63,共4页半导体学报（英文版）

基　　金：supported by the General Assembly Department

摘　　要：A novel algorithmic method, based on the different stress distribution on the surface of thin film in an SOI microstructure, is put forward to calculate the value of the silicon piezoresistance on the sensitive film. In the proposed method, we take the Ritz method as an initial theoretical model to calculate the rate of piezoresistance ΔR/R through an integral （the closed area Ω where the surface piezoresistance of the film lies as the integral area and the product of stress σ and piezoresistive coefficient π as the integral object） and compare the theoretical values with the experimental results. Compared with the traditional method, this novel calculation method is more accurate when applied to calculating the value of the silicon piezoresistance on the sensitive film of an SOI pieoresistive pressure sensor.A novel algorithmic method, based on the different stress distribution on the surface of thin film in an SOI microstructure, is put forward to calculate the value of the silicon piezoresistance on the sensitive film. In the proposed method, we take the Ritz method as an initial theoretical model to calculate the rate of piezoresistance ΔR/R through an integral （the closed area Ω where the surface piezoresistance of the film lies as the integral area and the product of stress σ and piezoresistive coefficient π as the integral object） and compare the theoretical values with the experimental results. Compared with the traditional method, this novel calculation method is more accurate when applied to calculating the value of the silicon piezoresistance on the sensitive film of an SOI pieoresistive pressure sensor.

关 键 词：PIEZORESISTANCE INTEGRAL piezoresistive pressure sensor ACCURACY 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] TH49[自动化与计算机技术—控制科学与工程]