荧光粉Zn_3Ga_2(Ge/Si)_2O_(10)∶Cr^(3+)的制备与发光性能研究  

Properties of the New Near-Infrared Long Afterglow Phosphors Zn_3Ga_2(Ge/Si)_2O_(10)∶ 2. 5%Cr^(3+)

作　　者：申凤娟[1] 崔瑞瑞[1] 黄维超[1] 邓朝勇[1] 

机构地区：[1]贵州大学电子信息学院,贵州省电子功能复合材料特色重点实验室,贵州贵阳550025

出　　处：《贵州大学学报（自然科学版）》2014年第2期45-48,共4页Journal of Guizhou University:Natural Sciences

基　　金：国家自然科学基金资助项目(50725416);贵州省科技计划支持项目(2012-3005;2011-2104);贵阳市科技计划项目(2012101-2-4)

摘　　要：采用高温固相法制备了新型近红外长余辉荧光粉Zn3Ga2(Ge/Si)2O10∶2.5%Cr3+.利用X射线衍射(XRD)、扫描电子显微镜(SEM)、荧光光谱(PL)和余辉测试等手段对所制备的样品进行结构表征和发光性能的分析。研究结果表明Zn3Ga2Ge2O10∶Cr3+和Zn3Ga2Si2O10∶Cr3+荧光粉性能差别很大。样品的激发和发射光谱均为宽带谱,且发射光谱(Cr3+的4T2→4A2跃迁引起的650 nm到800 nm宽带谱)的最大峰值位于698 nm左右,属于Cr3+的2E→4A2跃迁,为近红外发射。样品在380 nm到650 nm之间呈现出两个宽吸收带,属于Cr3+离子4T2→4A1和4T2→4A2能级跃迁。样品在用中心波长为365 nm的紫外灯激发之后,呈现出了长达30多小时的余辉衰减特性。The near-infrared long afterglow phosphors Zn3Ga2（Ge/Si）2O10∶ 2. 5% Cr3 ＋were synthesized by solid-state reaction method and analyzed by X-ray diffraction（ XRD）,field-emission scanning electron microscopy（FESEM）,photoluminescence spectra（PL） and curve of afterglow decay,etc. The results indicate that there are obvious differences between Zn3Ga2Ge2O10∶ Cr3 ＋and Zn3Ga2Si2O10∶ Cr3 ＋. The PL spectra of materials are broadband spectra. The peak of broad emission spectra（ from 650 nm to 800 nm attributed to4T2→4A2transition of Cr3 ＋ions） at 698 nm,which originates from the2E→4A2transition of Cr3 ＋. The excitation spectra consist of two strong broad bands ranging from 380 nm to 650 nm. One is attributed to the4A2→4T1（te2） transition and the other belong to the4A2→4T2（t2e） transition. The materials can luminesce more than 30 hours after the stoppage of the 365 nm ultraviolet light irradiation.

关 键 词：高温固相法 近红外 长余辉 

分 类 号：TB34[一般工业技术—材料科学与工程] O433.45[机械工程—光学工程]