一种高性能CMOS带隙基准电压源的设计  

Design of a CMOS Bandgap Voltage Reference with High Performance

作　　者：杨毅[1] 梁蓓[1] 

机构地区：[1]贵州大学电子信息学院,贵州贵阳550025

出　　处：《贵州大学学报（自然科学版）》2014年第2期69-73,共5页Journal of Guizhou University:Natural Sciences

基　　金：贵州省科学技术基金项目(黔科合J字[2011]2203)

摘　　要：基于CSMC的0.5μm CMOS工艺库模型,设计了一种具有良好性能的CMOS带隙基准电压源电路,并且利用Cadence公司的Spectre仿真工具对电路进行了仿真。所设计电路产生的基准电压约为1.14 V,在-40℃到100℃的温度范围内所得到的温度系数为4.6 ppm/℃,电源抑制比在低频时为-107 dB。A CMOS bandgap voltage reference circuit with good performance was designed. And the circuit was designed in standard CSMC 0. 5 μm CMOS process module library and the simulation was carried out by the Cadence Company＇s simulation tool of Spectre. The circuit can generate an output voltage of about 1. 14 V. Within the range from- 40 ℃ to 100 ℃,the temperature coefficient of proposed reference voltage circuit is 4. 6ppm / ℃. And the PSRR of output references is- 107 dB at DC frequency.

关 键 词：带隙基准电压源 温度系数 电源抑制比 

分 类 号：TN432[电子电信—微电子学与固体电子学]