晶体硅太阳电池接触电阻测量方法  

THE MEASUREMENT METHOD OF CONTACT RESISTANCE ON CRYSTALLINE SILICON SOLAR CELLS

作　　者：陈筑[1,2] 徐林[1] 

机构地区：[1]上海交通大学理学院,上海200240 [2]宁波尤利卡太阳能科技发展有限公司,宁波315177

出　　处：《太阳能学报》2014年第5期750-755,共6页Acta Energiae Solaris Sinica

摘　　要：分析传输线模型(TLM)法在接触电阻测量中的缺陷,通过建立金属-半导体界面的电压、电流方程推导出不同电流模式下接触电阻的表达式,在TLM法的基础上提出新的测量方法,可精确测量电极与硅体的比接触电阻率和接触界面的薄层方块电阻,从而准确计算出太阳电池接触电阻。该方法测量方便、计算结果精确,可有效应用于晶体硅太阳电池接触电阻的研究。The disadvantages of the Transmission Line Model（ TLM） in measuring the contact resistance of crystalline silicon solar cells were studied. Three contact resistance expressions were obtained from the equation of voltage and current established,and a new method on the basis of TLM was approved. The specific contact resistivity and interface sheet resistance can be accurately calculated through the new method,so the contact resistance of solar cells can be deduced at the same time. The method,which is very convenient and accurate,can be effectively applied in analysis of contact resistance on crystalline silicon solar cells.

关 键 词：接触电阻 太阳电池 传输线模型法 测量方法 

分 类 号：TM914.41[电气工程—电力电子与电力传动]