半导体激光器空间辐射应力加速寿命实验模型  

Accelerated Life Testing Model of Laser Diodes under Space Radiation Stress

作　　者：刘韵[1] 赵尚弘[1] 杨生胜[2] 李勇军[1] 强若馨 

机构地区：[1]空军工程大学信息与导航学院,陕西西安710077 [2]兰州物理研究所,甘肃兰州730000

出　　处：《中国激光》2014年第5期1-6,共6页Chinese Journal of Lasers

摘　　要：通过对半导体激光器在空间环境中辐射损伤机理的分析,得到了器件在辐射条件下的性能退化规律以及辐射过程中的退火规律。在此基础上,建立了辐射应力加速寿命实验模型,获得了故障时间、加速因子、故障概率分布函数、概率密度函数和平均故障前时间的表达式。模拟了三组应力分别为100、50和10Gy/s情况下器件的性能退化数据,进而对加速寿命实验模型的参数进行了估算,求得器件在0.03Gy/s的正常应力条件下的故障时间为43862h。基于威布尔故障分布,利用应力为50Gy/s的加速试验模拟数据,得到了器件的故障概率分布函数以及平均故障前时间,其平均故障前时间约为39755.8h。By analyzing the radiation impact mechanism in space ennironment, the irradiated performance degradation and the annealing effect during radiation are achieved. On the basis, accelerated life testing model under radiation stress is established, the expressions of failure time, accelerate factor, cumulative distribution function, probability density function and mean time to failure are obtained. Degradation datas under the stresses of 100, 50 and 10 Gy/s are simulated, and parameters in the accelerated life testing model are estimated. The failure time under normal radiation stress （0.03 Gy/s） is 43862 h. Basing on Weibull distribution and the simulated data under the stress of 50 Gy/s, both cumulative distribution function and mean time to failure of laser diodes are calculated, the mean time to failure is about 39755.8 h.

关 键 词：激光器 辐射应力 加速寿命实验 空间辐射效应 退火效应 

分 类 号：TN214[电子电信—物理电子学]