含有布拉格反射器的GaInP/GaInAs/Ge太阳电池研究  

GaInP/GaInAs/Ge solar cells research containing Bragg reflector

作　　者：高伟[1] 高慧[1] 许军[1] 张宝[1] 刘长喜[1] 王保民[1] 穆杰[1] 

机构地区：[1]中国电子科技集团公司第十八研究所,天津300384

出　　处：《电源技术》2014年第5期841-843,共3页Chinese Journal of Power Sources

摘　　要：通过数学方法,对中心波长为880 nm的布拉格反射器进行了理论计算和设计。采用MOCVD技术在Ge衬底上外延生长了15个周期,中心波长为880 nm的AlAs/GaAs结构的布拉格反射器,并且成功植入到GaInP/GaInAs/Ge结构的太阳电池中,使中间电池减薄到1.5μm,并且在AM0光谱下电池效率达到29.36%。The theoretical calculation and design of the center wavelength of 880 nm Bragg reflector was carried out by the method of mathematics. Using the technique of MOCVD epitaxialy growing 15 cycles on Ge substrate, Bragg reflector of the center wavelength of 880 nm AlAs/GaAs structure successfully implanted into the GaInP/GaInAs/Ge structure solar cells, leading the GaInAs cells thinning to 1.5 μm, solar cells efficiency reaching 29.36% under AM0spectrum.

关 键 词：布拉格反射器 太阳电池 中心波长 反射率 

分 类 号：TM914[电气工程—电力电子与电力传动]