正交相BaSi_2薄膜的制备及结晶研究  

Study on Preparation and Crystallization of Orthorhombic BaSi_2 Film

作　　者：杨子义[1,2] 郝正同[2] 徐虎[2] 

机构地区：[1]贵阳学院电子与通信工程学院,贵阳550005 [2]贵州大学新型光电子材料与技术研究所,贵阳550025

出　　处：《材料导报》2014年第10期38-41,共4页Materials Reports

基　　金：贵州省科学技术基金(黔科合J字[2010]2002号);贵州省科学技术基金(黔科合J字LKG[2013]07号);贵州省教育厅信号与信息处理科技创新团队及贵阳学院信息与通信工程校级重点学科

摘　　要：室温下采用磁控溅射的方法在p-Si（111）衬底上沉积Ba膜,然后置入高真空退火炉中在400～850℃退火12 h生成Ba的硅化物薄膜,对退火后的Ba-Si化合物进行了晶体结构、表面形貌、透射光谱及电学性质的测试分析,研究了退火温度对薄膜结晶的影响。实验结果表明,退火温度对生成Ba-Si化合物及薄膜的表面形貌影响很大,随着退火温度从400℃升高到800℃,薄膜的结晶情况逐渐改善,晶粒随着温度的升高逐渐增大;800℃对于生成多晶的BaSi2薄膜是一个比较理想的退火温度;850℃生成了多相共生的硅化物薄膜。Ba layer was deposited on p-Si（111） substrate by magnetron sputtering at room temperature.Silicide films grew after the samples were annealed in the vacuum furnace for 12 h.The annealing temperature varys from 400 ℃ to 850 ℃.Crystal structure,surface morphology,transmission spectra and electricity property of the Ba-Si compounds were tested and analysed in detail The influence of annealing temperature on the growth of Ba-Si compounds was studied.The results show annealing temperature play an important effect on the formation of Ba-Si compounds and the surface features of the films.The crystallization of the films on silicon substrates is improved with the increasing of annealing temperature from 400 ℃ to 800 ℃.The higher the annealing temperature rises,the bigger the grain grows.800 ℃ is an optimal annealing temperature to prepare polycrystal BaSi2 film.Three barium silicides grew when annealed at 850 ℃.

关 键 词：BaSi2薄膜 晶体结构 表面形貌 透射光谱 电学性质 

分 类 号：TB44[一般工业技术]