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机构地区:[1]中山大学光电材料与技术国家重点实验室∥物理科学与工程技术学院,广东广州510275
出 处:《中山大学学报(自然科学版)》2014年第3期146-149,共4页Acta Scientiarum Naturalium Universitatis Sunyatseni
基 金:国家自然科学基金资助项目(61176010;61172027)
摘 要:采用溶胶-凝胶法,在Si(100)衬底上制备了3%Co掺杂CeO2薄膜,研究了不同热处理温度对Ce0.97Co0.03O2薄膜结构和光学性质的影响。X射线衍射(XRD)表明,3%Co掺杂CeO2薄膜为多晶薄膜,且未破坏CeO2原有的结构,随着退火温度的升高,晶粒尺寸逐渐增大。椭偏光谱法研究表明,Ce0.97Co0.03O2薄膜的光学常数(折射率n、消光系数k)随着退火温度增加而增大,光学带隙Eg随退火温度增加而减小,这是薄膜结构随退火温度增加发生变化所致。3% Co doped CeO2 thin films were prepared on Si (100) by Sol-Gel method. The influence of annealing temperature on the structural and optical properties of Ce0.97 Co0.03 O2 thin films was studied. X-ray diffraction (XRD) showed that 3% Co doped CeO2 thin films were polyeryatalline with the same structure of CeO2. The average crystallite size increased with increasing annealing temperature. Spectro- scopic ellipsometry (SE) studies showed that the optical constants (the refractive index n and the extinction coefficient k) of Ce0.97 Co0.03 O2 thin films increase with increasing annealing temperature, and the optical band gap Eg decrease as increasing annealing temperature. The variation in optical properties with annealing temperature revealed that the film structure was affected by annealing.
关 键 词:3% Co掺杂CeO2薄膜 溶胶-凝胶法 光学性质
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