宽发光区二极管激光阵列的侧模简单研究  

Study on lateral mode of broad-stripe diode laser array

作　　者：窦汝海[1] 陈建国[2] 静国梁[3] 鲁雯[1] 

机构地区：[1]泰山医学院放射学院 [2]四川大学电子信息学院 [3]山东理工职业学院光电工程学院

出　　处：《激光杂志》2014年第5期1-4,共4页Laser Journal

基　　金：国家自然科学基金重点项目(批准号:60578013)资助的课题

摘　　要：宽发光区二极管激光阵列的侧模分布十分复杂,很难将各阶侧模区分出进行单独研究。本文利用多光束相干合束理论给出了宽发光区二极管激光阵列相干合束远场分布的表达式,在此基础上获知远场光强分布的包络线由发光单元的侧模决定。从实验记录结果可以看出,利用外腔镜对宽发光区二极管激光阵列进行锁相,将某阶侧模锁定(其中基侧模最容易实现),抑制其他阶侧模,并获得相干合束的远场光强分布图。将理论分析结果与实验结果进行对比,能较好的吻合。结果表明,虽然LDA侧模结构复杂,较难分析,但可借助于宽发光区二极管激光阵列相干锁相分析侧模结构。所得结果表明利用宽发光区二极管激光阵列发光单元的侧模可以改善宽发光区二极管激光阵列光束质量。To distinguish lateral modes of broad-stripe diode laser array（LDA） is difficult, because the structure of lateral modes is complex. By using multiple beams coherent combined beam theory, the expression of far field pattern is got. Based on the expression, the lateral mode of emitter decides the envelope line of far field pattern. From the experimental records, with an external cavity, broad-stripe semiconductor diode laser array had been phase locked. The phase-locking between one order lateral modes（fundamental lateral mode was most easily phase locked）of emitters of the LDA is realized, the other order lateral modes was inhibited. A comparison between theory model and experimentation was also made, satisfying result had been obtained. From these results, it can be concluded that using lateral mode of LDA, the quality of LDA beams can be improved.

关 键 词：半导体二极管激光阵列 锁相 多光束干涉 侧模 

分 类 号：TN248.4[电子电信—物理电子学]