IGBT开关机理对逆变器死区时间的影响  

The influence of IGBT switching mechanism on the dead-time of inverters

作　　者：罗毅飞[1] 刘宾礼[1] 汪波[1] 唐勇[1] 

机构地区：[1]海军工程大学舰船综合电力技术国防科技重点实验室,湖北武汉430033

出　　处：《电机与控制学报》2014年第5期62-68,75,共8页Electric Machines and Control

基　　金：国家自然科学基金重点项目(50737004);国家自然科学基金(51277178);国家重点基础研究发展计划973项目(2013CB035601)

摘　　要：为了研究逆变器中功率器件对死区时间设置的影响,依据半导体物理理论与死区时间的计算依据,研究了电压、电流、温度对绝缘栅双极型晶体管(insulated-gate bipolar transistor,IGBT)开关时间的影响机理,给出了这3个因素对IGBT开关时间的影响规律,并得到了这3个因素对死区时间的影响机理。通过对两电平半桥逆变单元测试表明:死区时间随电压的增大近似呈线性关系增大,随电流的增大近似呈指数和双曲线复合关系而减小,随温度的增大近似呈线性关系增大,且按照计算依据得到的死区时间与实测桥路直通的发生相符,验证了理论分析的正确性。得出的结论可为实际应用中逆变器等电能变化装置死区时间的设置以及死区补偿算法的优化提供重要的参考依据。To investigate the influential factors of power devices on the dead-time of inverters,the effects of voltage,current,and temperature on the switching time of the insulated-gate bipolar transistor（ IGBT） were analyzed based on the semiconductor theory and the formula of dead-time. The regularity of the three factors with the IGBT switching time was given and therefore the dead-time was obtained. Experiment results using two-level half-bridge inverter unit shows that the dead-time increases approximately linearly with the voltage ascending and the temperature ascending,but decreases with the current ascending,following the composed rule of exponential and hyperbola. In addition,the occurrence of bridge shoot through is in accordance with the calculation of dead-time,which proves the accuracy of the theoretical analysis. Finally,the obtained conclusion can be important references for the accurate setup of dead-time and the optimization of dead-time compensation algorithm in electrical power converters in practical applications.

关 键 词：逆变器 绝缘栅双极型晶体管 死区时间 开通延时 关断时间 桥路直通 

分 类 号：TM46[电气工程—电器]