改进垂直布里奇曼法生长硒化镓单晶（英文）  

A Modified Vertical Bridgman Method for Growth of GaSe Single Crystal

作　　者：黄昌保[1] 倪友保[1] 吴海信[1] 王振友[1] 程旭东[1] 肖瑞春[1] 

机构地区：[1]中国科学院安徽光学精密机械研究所,合肥230031

出　　处：《无机材料学报》2014年第5期557-560,共4页Journal of Inorganic Materials

基　　金：National Natural Science Foundation of China(51202250);Knowledge Innovation Program of the Chinese Academy of Sciences(13J131211)

摘　　要：当生长ε相的硒化镓单晶时,组分挥发和固液界面震荡严重损坏晶体的结晶质量。利用改进垂直布里奇曼法生长出φ19mm×65mm硒化镓单晶。X射线粉末衍射仪（XRD）和傅立叶红外光谱仪（FT-IR）分别用于测量晶体的结晶度和光学性质。红外测试表明,硒化镓晶体透过波谱较宽（0.65-16μm）和吸收系数较低（〈0.3cm-1）。As growing e-GaSe single crystal, volatile component and curving solidification interface spoil the qualities of crystals. The GaSe single crystal in φ19mm×65mm size was grown by modified vertical Bridgman method. The crystallinity and optical properties of as-grown crystals were measured by XRD and transmission spectra, respectively. The FT-IR measurements indicated wide transparency over the spectral range （0.65-16 μm） and low absorption coefficient （〈0.3 cm-1） in grown GaSe crystal.

关 键 词：布里奇曼技术 非线性光学晶体 固化界面 

分 类 号：TQ174[化学工程—陶瓷工业]