辉光放电质谱仪直接测定高纯银的痕量杂质元素  

DETERMINATION OF TRACE ELEMENT IN HIGH-PURITY SLINER BY GDMS

作　　者：詹科 孙平 种娜 

机构地区：[1]峨嵋半导体材料研究所,四川峨眉614200

出　　处：《硅谷》2014年第9期126-127,共2页

摘　　要：本文报道了一种在无标准样品存在时,用辉光放电质谱仪ELEMENT GD直接且快速地测定高纯银中痕量杂质元素的方法。该方法可应用于冶金或半导体工业中高纯金属和半导体材料中痕量杂质元素的定量分析,也可提升高纯金属的痕量分析技术水平。It is reported that when there are no standard smaples available ,a direct method is determinating trace e1ements in high-purity sliver by glow discharge mass spectrometer（GDMS） in this paper. Experiments show that this method has many unique advantages and can be used as a powerful trace elemental quantitative analysis of high-purity metal and semiconductor in the metallurgy and semiconductor industry.Meanwhile,it can improve technical level of high-purity metal’s trace analysis.

关 键 词：辉光放电质谱法 高纯银 痕量元素 测定 

分 类 号：O657.63[理学—分析化学]