Retarded thermal oxidation of strained Si substrate  

作　　者：孙家宝 唐晓雨 杨周伟 施毅 赵毅 

机构地区：[1]School of Electronic Science and Engineering, Nanjing University [2]State Key Laboratory of Silicon Materials, Zhejiang University

出　　处：《Chinese Physics B》2014年第6期407-410,共4页中国物理B（英文版）

基　　金：supported by the National Key Basic Research Project of China(Grant No.2011CBA00607);the National Natural Science Foundation of China(Grant Nos.61106089 and 61376097);the Program B for Outstanding Ph.D.Candidate of Nanjing University,China(Grant No.201301B005)

摘　　要：Strained Si is recognized as a necessary technology booster for modem integrated circuit technology. However, the thermal oxidation behaviors of strained Si substrates are not well understood yet despite their importance. In this study, we for the first time experimentally find that all types of strained Si substrates （uniaxial tensile, uniaxial compressive, biaxial tensile, and biaxial compressive） show smaller thermal oxidation rates than an unstrained Si substrate. The possible mechanisms for these retarded thermal oxidation rates in strained Si substrates are also discussed.Strained Si is recognized as a necessary technology booster for modem integrated circuit technology. However, the thermal oxidation behaviors of strained Si substrates are not well understood yet despite their importance. In this study, we for the first time experimentally find that all types of strained Si substrates （uniaxial tensile, uniaxial compressive, biaxial tensile, and biaxial compressive） show smaller thermal oxidation rates than an unstrained Si substrate. The possible mechanisms for these retarded thermal oxidation rates in strained Si substrates are also discussed.

关 键 词：strained Si uniaxial and biaxial tensile and compressive stresses thermal oxidation rates 

分 类 号：TN432[电子电信—微电子学与固体电子学]