Fabricating GeO_2 passivation layer by N_2O plasma oxidation for Ge NMOSFETs application  

作　　者：林猛 安霞 黎明 云全新 李敏 李志强 刘朋强 张兴 黄如 

机构地区：[1]Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University

出　　处：《Chinese Physics B》2014年第6期538-541,共4页中国物理B（英文版）

基　　金：supported by the National Basic Research Program of China(Grant No.2011CBA00601);the National Natural Science Foundation of China(Grant Nos.60625403,60806033,and 60925015)

摘　　要：In this paper, oxidation of Ge surface by N2O plasma is presented and experimentally demonstrated. Results show that 1.0-nm GeO2 is achieved after 120-s N20 plasma oxidation at 300 ℃. The GeO2/Ge interface is atomically smooth. The interface state density of Ge surface after N20 plasma passivation is about - 3 × 1011 cm-2.eV-1. With GeO2 passivation, the hysteresis of metal-oxide-semiconductor （MOS） capacitor with A1203 serving as gate dielectric is reduced to - 50 mV, compared with - 130 mV of the untreated one. The Fermi-level at GeO2/Ge interface is unpinned, and the surface potential is effectively modulated by the gate voltage.In this paper, oxidation of Ge surface by N2O plasma is presented and experimentally demonstrated. Results show that 1.0-nm GeO2 is achieved after 120-s N20 plasma oxidation at 300 ℃. The GeO2/Ge interface is atomically smooth. The interface state density of Ge surface after N20 plasma passivation is about - 3 × 1011 cm-2.eV-1. With GeO2 passivation, the hysteresis of metal-oxide-semiconductor （MOS） capacitor with A1203 serving as gate dielectric is reduced to - 50 mV, compared with - 130 mV of the untreated one. The Fermi-level at GeO2/Ge interface is unpinned, and the surface potential is effectively modulated by the gate voltage.

关 键 词：Ge GeO2 passivation N2O plasma oxidation Ge NMOSFETs 

分 类 号：O53[理学—等离子体物理]