Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AlInGaN superlattice electron blocking layer  

作　　者：卓祥景 章俊 李丹伟 易翰翔 任志伟 童金辉 王幸福 陈鑫 赵璧君 王伟丽 李述体 

机构地区：[1]Laboratory of Nano-photonic Functional Materials and Devices, Institute of Opto-electronic Materials and Technology, South China Normal University

出　　处：《Chinese Physics B》2014年第6期608-612,共5页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.51172079);the Science and Technology Program of Guangdong Province,China(Grant Nos.2010B090400456 and 2010A081002002);the Science and Technology Program of Guangzhou City,China(Grant No.11A52091257)

摘　　要：InGaN/AIlnGaN superlattice （SL） is designed as the electron blocking layer （EBL） of an InGaN/GaN-based light- emitting diode （LED）. The energy band structure, polarization field at the last-GaN-barrier/EBL interface, carrier concen- tration, radiative recombination rate, electron leakage, internal quantum efficiency （IQE）, current-voltage （l-V） perfor- mance curve, light output-current （L-l） characteristic, and spontaneous emission spectrum are systematically numerically investigated using APSYS simulation software. It is found that the fabricated LED with InGaN/AIInGaN SL EBL exhibits higher light output power, low forward voltage, and low current leakage compared with those of its counterparts. Meanwhile, the efficiency droop can be effectively mitigated. These improvements are mainly attributed to the higher hole injection efficiency and better electron confinement when InGaN/AIlnGaN SL EBL is used.InGaN/AIlnGaN superlattice （SL） is designed as the electron blocking layer （EBL） of an InGaN/GaN-based light- emitting diode （LED）. The energy band structure, polarization field at the last-GaN-barrier/EBL interface, carrier concen- tration, radiative recombination rate, electron leakage, internal quantum efficiency （IQE）, current-voltage （l-V） perfor- mance curve, light output-current （L-l） characteristic, and spontaneous emission spectrum are systematically numerically investigated using APSYS simulation software. It is found that the fabricated LED with InGaN/AIInGaN SL EBL exhibits higher light output power, low forward voltage, and low current leakage compared with those of its counterparts. Meanwhile, the efficiency droop can be effectively mitigated. These improvements are mainly attributed to the higher hole injection efficiency and better electron confinement when InGaN/AIlnGaN SL EBL is used.

关 键 词：light-emitting diode InGaN/AIlnGaN superlattice efficiency droop 

分 类 号：TN312.8[电子电信—物理电子学] TN405.97