百瓦级多芯片半导体激光器稳态热分析  

Steady-state thermal analysis of hundred-watt semiconductor laser with multichip-packaging

作　　者：王文[1] 高欣[1] 周泽鹏[1] 许留洋[1] 周路[1] 薄报学[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《红外与激光工程》2014年第5期1438-1443,共6页Infrared and Laser Engineering

基　　金：国家自然科学基金(61177019;61176048);吉林省科技发展计划(20120361)

摘　　要：半导体激光器在各领域的广泛应用要求其输出功率不断提高,使得多芯片集成封装大功率半导体激光器的发展成为主流之一。针对典型的12只芯片以阶梯形式封装的百瓦级激光器,利用ANSYS软件进行了稳态热分析,模拟得出芯片有源区温度及其热耦合温升与热沉结构尺寸变化的关系曲线,分析了该激光器热特性,进而提出一种使芯片散热较好的热沉结构。The semiconductor lasers are widely used in various fields, this requires that their output power is increasingly improved, so the development of high power semiconductor laser with multichip-packaging is one of mainstream. A typical hundred-watt semiconductor laser packaged with 12 chips in ladder form was analyzed in thermal steady-state, obtaining the rule curves of the temperature of active region of chip and temperature rise by thermal coupling in different parameters of heat sink, and a heat sink structure with better heat dissipation was put forward.

关 键 词：百瓦级半导体激光器 ANSYS 有源区 热耦合 热沉 

分 类 号：TN248.4[电子电信—物理电子学]