重离子诱发二次光子位置测量技术研究  

Position Measurement Study of Secondary Photon Induced by Ion

作　　者：王惠[1] 郭刚[1] 史淑廷[1] 范辉[1] 

机构地区：[1]中国原子能科学研究院,中国北京102413

出　　处：《科技视界》2014年第10期63-63,15,共2页Science & Technology Vision

摘　　要：为进一步丰富芯片微观区域单粒子效应敏感度研究方法,开展IPEM装置建设前期研究。针对新型装置入射离子位置测量这一关键问题,在串列加速器单粒子效应专用辐照终端上,搭建光学位置测量装置,对单个离子在闪烁体材料上诱发产生的光子进行位置测量。通过分析实验数据,确认CCD测量到代表单个入射离子的二次光子图像,为下一步IPEM辐照装置的建设积累了经验。To increase methods of finding single event effect sensitivity in semiconductor circuits micro areas, IPEM is first developed in China. To solve the key technology of how to measure the ions position, a optics imaging system was built on the irradiation facility dedicated for single event effects in tandem accelerator. The imaging of secondary photons produced by every ion striking scintillator materials was taken by the optics system. After analyzing experimental data, the secondary photon image taken by CCD represents an ion. This is very useful for IPEM next development.

关 键 词：IPEM 二次光子 位置测量 CCD 

分 类 号：O571.6[理学—粒子物理与原子核物理]