非晶硅锗薄膜与太阳能电池研究  

Study on Amorphous Silicon Germanium(a-SiGe) Thin Films and Solar Cells

作　　者：刘石勇[1,2] 李旺[1,2] 牛新伟[1] 杨德仁[2] 王仕鹏[1] 黄海燕[1] 陆川[1] 

机构地区：[1]浙江正泰太阳能科技有限公司,杭州310053 [2]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《人工晶体学报》2014年第4期765-770,共6页Journal of Synthetic Crystals

基　　金：国家国际合作项目(2010DFB63080);国家高技术研究发展计划(863计划)(2012AA052401)

摘　　要：采用等离子体增强化学气相沉积(PECVD)技术在1.1 m×1.3 m的大面积玻璃衬底上制备非晶硅锗(aSiGe)薄膜和太阳能电池。系统研究了锗烷流量比(RGe)、氢气流量比(RH)、沉积功率和压强对a-SiGe薄膜光学带隙以及沉积速率的影响;分析了具有不同RGe的本征层对a-SiGe单结电池的影响;通过调节沉积参数制备出具有合适本征层带隙的高质量a-SiGe单结电池,实现在800 nm波长处的量子效率达到18.9%,同时填充因子(FF)也达到0.62。Amorphous silicon germanium（a-SiGe） thin films and solar cells were grown by plasma enhanced chemical vapor deposition（PECVD） on the large area glass substrates of size 1. 1 m × 1. 3 m. The effects of germane flow ratio（RGe）,hydrogen dilution ratio（RH）,power and pressure on the optical bandgap and deposition rate of a-SiGe thin films were researched systematically. Then,the influence of intrinsic layers with different RGeon the a-SiGe single solar cells were also investigated. Moreover,the aSiGe intrinsic layers with suitable bandgap are fabricated by adjusting the deposition parameters,which result in the quantum efficiency of a-SiGe single solar cells is 18. 9% at 800 nm and fill factor（FF） is more than 0. 62.

关 键 词：非晶硅锗 光学带隙 太阳能电池 

分 类 号：TK511[动力工程及工程热物理—热能工程]