Mg,Sn共掺对ZnO薄膜光电性能的影响  

Effect of Mg,Sn Co-doping on the Photoelectric Properties of ZnO Thin Films

作　　者：马德福[1] 胡跃辉[1] 陈义川[1] 刘细妹[1] 张志明[1] 徐斌[1] 

机构地区：[1]景德镇陶瓷学院机械电子工程学院,景德镇333403

出　　处：《人工晶体学报》2014年第4期862-869,共8页Journal of Synthetic Crystals

基　　金：国家自然科学基金(61066003);江西省科技支撑计划(2010BGA01100);江西省对外合作资助项目(20111BDH80031;20132BDH80025);江西省自然科学基金(20111BAB202005;20132BAB202001);江西省主要学科学术和技术带头人培养计划(20123BCB22002);江西省高等学校科技落地计划(KJLD12085);江西省教育厅科技(GJJ12494;GJJ13643;GJJ13625);景德镇陶瓷学院研究生创新专项资金(YC2012-S116)

摘　　要：采用溶胶-凝胶旋涂法在石英衬底上制备了不同Mg,Sn掺杂比例的ZnO薄膜,研究了不同Mg,Sn比例对ZnO薄膜微观结构、表面形貌和光电性能的影响及其内在机制。结果表明:Mg,Sn掺杂后薄膜仍保持六方纤锌矿结构并沿(002)方向择优生长,掺入2%的Mg后,晶粒有所长大,保持2%Mg不变,随着Sn的掺入,薄膜晶粒减小,但薄膜的致密度、表面平整度以及薄膜晶粒均匀性却有明显的改善;适量Mg,Sn掺杂,一方面,因Mg,Zn离子的金属性差异和Sn4+替位Zn2+晶格位置提供两个自由电子使薄膜载流子浓度增加产生Burstein-Moss效应,另一方面,因晶粒尺寸变小产生量子限域效应,薄膜禁带宽度增大,同时可见光透过率也有着明显提高;Mg,Sn共掺杂使薄膜结晶变好,载流子迁移率增大,同时载流子浓度上升,ZnO薄膜电阻率呈现较大幅度的下降。The ZnO thin films doped with different Mg,Sn were synthesized on quartz glass substrate by sol-gel spin coating method. The effects of Mg,Sn Co-doping on microstructure,surface morphology and photoelectric properties were characterized by X-ray diffraction,scanning electron microscopy,ultraviolet visible（UV-Vis） and four point probe,and the inner mechanism were also explored. The results show that the films still remain hexagonal wurtzite-structured with c-axis preferred orientation growth after doped Mg and Sn. The grain size will increase a little after doped 2% Mg,kept Mg 2at% unchanged,doping Sn,the compactness,flatness and grain uniformity of the film will be improved obviously although the grain size will decrease. The band gap will be broadened for Quantum Confinement effect caused by the decrease of grain size and the Burstein-Moss effects caused by the increased carriers,which were provided by the metallicity difference between Mg ion and Zn ion,and Sn ion substitute for Zn ion in lattice. In the same time,the transmittance in visible region will also be improved after doping Mg and Sn. The electrical resistivity will drop sharply for the increasing of carrier concentration and improving of mobility for the better crystalline quality after doped Mg and Sn.

关 键 词：ZNO薄膜 Mg Sn共掺 溶胶-凝胶法 光电性能 

分 类 号：O484[理学—固体物理]