预氧化条件对A1N—DBC剥离强度及孔洞的影响  

Effects of Pre - Oxidation on Peel Strength and Void of AIN - DBC

作　　者：张振文[1] 耿春磊[1] 许海仙[1] 

机构地区：[1]中国电子科技集团公司第43研究所,合肥230022

出　　处：《混合微电子技术》2013年第4期36-39,共4页Hybrid Microelectronics Technology

摘　　要：本文主要采用预氧化技术对氮化铝陶瓷表面进行处理，形成致密、均匀的过渡氧化层；高质量的氧化过渡层是成功实现氮化铝覆铜的关键，通过保温温度、保温时间、氧浓度等条件的改变来调整氧化层的厚度及致密性，最终得到剥离强度大于4N／mm的氮化铝覆铜基板，初步满足常规功率模块应用要求。In this paper, the pre - oxidation technology is used for A1N ceramic surface treatment to form a dense, uniform oxide transitional layer. And high quality oxide transitional layer is the key to successfully implement A1N - DBC process. The thickness and density of the oxide layer can be adjusted by changing the conditions of preserving temperature, soaking time and oxygen concentration. Finally the peel strength of A1N - DBC suhstrate is greater than 4N/mm. They can meet the requirements of conventional power module applications.

关 键 词：氮化铝 预氧化 覆铜基板 剥离强度 

分 类 号：TB331[一般工业技术—材料科学与工程]