PIN限幅器电磁脉冲效应数值模拟与验证  

Numerical simulation and verification of electromagnetic pulse effect of PIN diode limiter

作　　者：赵振国[1,2] 周海京[1,2] 马弘舸[3,2] 赵强[1,2] 钟龙权[3,2] 

机构地区：[1]北京应用物理与计算数学研究所,北京100088 [2]中国工程物理研究院复杂电磁环境实验室,四川绵阳621900 [3]中国工程物理研究院应用电子研究所,高功率微波技术重点实验室,四川绵阳621900

出　　处：《强激光与粒子束》2014年第6期81-85,共5页High Power Laser and Particle Beams

基　　金：国家重点基础研究发展计划项目(2013CB328904);国家自然科学基金项目(11371067);高功率微波技术重点实验室基金项目(2013HPM-11)

摘　　要：基于电磁脉冲对半导体器件效应的电-热多物理场模型,利用Sentaurus-TCAD仿真器建立了PIN限幅器电磁脉冲效应数值模型,研究了不同峰值功率的电磁脉冲作用下限幅器的输入/输出特性,以及大功率电磁脉冲注入PIN器件热损伤阈值与脉冲宽度的关系。模拟与实验结果表明:基于器件热效应影响载流子输运过程的电-热多物理模场型,模拟限幅器在大功率电磁脉冲注入下输入/输出功率的结果与实验结果吻合较好;模拟大功率电磁脉冲注入PIN器件热损伤阈值与脉冲宽度的关系式,与Wunsch-Bell半经验关系式符合较好。The electromagnetic pulse effect mechanism of PIN limiter is analyzed,and the device＇s multi-physical field model is established with software Sentaurus-TCAD.The input/output power curve,indicating the increase in flat leakage with inereasing input power,is studied,and the simulation results are in good agreement with the experimental ones.The influence of electromagnetic pulse width on the diode＇s damage is simulated.Adopting the data analysis software,the relation equation between the device damage power and the pulse width under different injecting power is obtained.It is analyzed using Wunsch and Bell developed semi-empirical relationships.

关 键 词：PIN限幅器 电磁脉冲 多物理场模型 器件仿真 

分 类 号：TN385[电子电信—物理电子学]