激光加热退火处理对NiMn基磁性薄膜交换偏置场的影响  

Exchange bias in NiMn-based magnetic films after laser thermal annealing

作　　者：潘旋[1] 周广宏[1,2] 蒋素琴[2] 朱雨富[2] 

机构地区：[1]西南科技大学材料科学与工程学院,四川绵阳621010 [2]淮阴工学院江苏省介入医疗器械研究重点实验室,江苏淮安223003

出　　处：《功能材料》2014年第10期105-108,共4页Journal of Functional Materials

基　　金：江苏省自然科学基金资助项目(BK2012668)

摘　　要：通过激光加热对Ni81Fe19(15 nm)/Ni45Mn55(x nm)磁性双层膜进行快速退火处理,系统研究了激光辐照参数对交换偏置场(Hex)大小的影响。结果表明,激光的能量密度强烈影响双层膜交换偏置效应,并存在一个能量密度的阈值(约为150mJ/cm2),此时磁性双层膜能够产生较明显的交换偏置现象。磁性双层膜的Hex随着能量密度的进一步增加逐渐变大,但随后减小直至完全消失。当NiMn层厚度为25nm时,经激光加热退火处理后双层膜的Hex最大值约为26.2kA/m,略大于常规退火后的Hex值(22.3kA/m)。This paper deals with the exchange bias in Ni81Fe19（15 nm）/Ni45Mn55（x nm）bilayers annealed by la-ser.The influences of the laser parameters on the exchange bias （H ex ）were systematic investigated.The re-sults show that the H ex was strongly affected by the energy density of laser,and that there exists a threshold of energy density （about 150 mJ/cm2）where the exchange bias appears.With the increase of energy density,the exchange coupling becomes stronger and reaches a maximum;then it disappears gradually.In the case of the thickness of NiMn was 25 nm,the Hex was 26.2 kA/m after laser thermal annealing,which was slightly higher than that of conventional thermal annealing （22.3 kA/m）.

关 键 词：NiMn 磁性薄膜 交换偏置场 激光加热退火 

分 类 号：TG111[金属学及工艺—物理冶金] O484.5[金属学及工艺—金属学]