多孔阳极氧化铝膜形成过程中电场分布的有限元分析  

Finite Element Analysis of Electric-Field Distribution during the Formation of Porous Anodic Alumina Film

作　　者：刘学杰[1] 刘金会[1] 任元[1] 李良方[1] 

机构地区：[1]内蒙古科技大学机械工程学院,内蒙古包头014010

出　　处：《材料保护》2014年第5期19-21,7,共3页Materials Protection

基　　金：包头市科技计划项目(2013J2001-1)资助

摘　　要：为了进一步了解多孔阳极氧化铝膜孔洞的形成、发展过程与电场分布的关系,建立了4种模型对多孔阳极氧化铝膜中孔洞形成初始阶段和发展阶段的电场分布情况进行了有限元分析。结果表明:在孔洞初始阶段,孔洞间距较小的孔洞底部电场强度小,而间距较大的孔洞底部电场强度较大,浅孔底部电场强度较小,深孔底部电场强度较大;在孔洞发展阶段,间距不等的孔底部电场分布不均,面向壁厚侧底部电场强度较大,面向壁薄侧底部电场强度较小。这些电场分布情况可为进一步分析孔洞发展以及导致孔洞有序分布因素奠定基础。Four kinds of models were established to conduct finite element analyses of the electric-field distributions in the initial formation stage and development stage of the holes of porous anodic aluminum oxide film. Results showed that,during the initial stage of hole formation,the electric-field intensity at the bottom of small-spacing hole was small,and the electric-field intensity at the bottom of large-spacing hole was large. Besides,the electric-field intensity at the bottom of shallow hole was small,and that at the bottom of deep hole was large. In the development stage,the electric-field distribution at the bottom of unequal-spacing hole was uneven. At the side of thick wall,the electric field intensity was large,and that at the side of thin wall was small. The present research could provide references to further study of the development stage of the holes as well as the factors accounting for the ordered distribution of holes.

关 键 词：多孔阳极氧化铝膜 电场分布 孔洞 有序生长 有限元分析 

分 类 号：TG174.451[金属学及工艺—金属表面处理]