极化调控AlGaN基日盲紫外雪崩光电二极管性能优化  

Improvements of Solar-Blind Ultraviolet AlGaN Avalanche Photodiodes with the Polarization Effects

作　　者：董可秀[1] 赵先峰[1] 欧美英[1] 

机构地区：[1]滁州学院机械与电子工程学院,安徽滁州239000

出　　处：《激光与光电子学进展》2014年第6期178-183,共6页Laser & Optoelectronics Progress

摘　　要：通过数值模拟研究了各层参数对极化调控的背入射异质结分离吸收倍增层型AlGaN基雪崩光电二极管(APDs)性能的影响,并详细分析相关物理机制。计算结果表明:参数的优化有利于降低APDs的雪崩击穿电压,提高倍增因子。特别是对于P-GaN层AlGaN雪崩光电二极管,倍增因子增加可超过300%,这是由于该雪崩光电二极管的GaN/Al0.4Ga0.6N异质界面的强极化电荷调节了倍增层、中间插入层、吸收层的电场分布,增加了载流子的注入和倍增效率,同时还由于参数优化减小了倍增时的暗电流。Effects of the parameters of each layer on the performance of back-illuminated separate absorption and multiplication hetero-junction A1GaN avalanche photodiodes （APDs） with the polarization effect are investigated numerically, and the detailed physical mechanisms are explained. The results show that the breakdown voltage for the APDs can lower significantly and the gain increases pronouncedly with the optimization of these parameters. The maximum gain for A1GaN APDs with p- GaN layer has been improved more than 300%. This is because the polarization induced charge at the GaN/Al0.4Ga0.6N hetero-interface controls the distribution of the electric field of multiplication, inserting and absorption layer, and enhances the efficiency of injection and multiplication of carriers. Meanwhile, the optimization of the parameters can decrease the dark current of APDs at breakdown voltage.

关 键 词：光学器件 异质结雪崩光电二极管 分离吸收倍增 日盲 极化场 

分 类 号：TN364.2[电子电信—物理电子学]