一种新型集成荧光传感器设计与实现  

Design and realization of a new type integrated fluorescence sensor

作　　者：施朝霞[1] 曹全君[1] 常丽萍[1] 

机构地区：[1]浙江工业大学信息学院 浙江省光纤通信技术重点研究实验室,浙江杭州310023

出　　处：《传感器与微系统》2014年第6期69-71,共3页Transducer and Microsystem Technologies

基　　金：国家自然科学基金资助项目(61306090)

摘　　要：基于标准CMOS工艺设计了一种新型的集成荧光传感器,该传感器采用P+/Nwell/Psub双结深光电二极管结构和高灵敏度的电容跨阻抗放大器(CTIA)有源像素电路结构。传感器采用0.5μm CMOS工艺实现,测试结果表明:双结深光电二极管在波长532 nm时具有峰值灵敏度为2×10-8A·m2/W,CTIA有源像素结构在光照6lx、积分时间为310μs时的灵敏度可以达到2243 V/lx·s。该设计表明:采用双结深光电二极管单元的CTIA有源像素电路对微弱的光具有更高的光电转换灵敏度。A new type integrated fluorescence sensor is designed based on standard CMOS process, the sensor consists of P^＋/Nwell/Psub double-junction photodiode structure and high sensitivity CTIA active pixel circuit structure. Realization of sensor is used 0.5 μm CMOS technology, and test results show that peak value sensitivity of double-junction photodiode is 2×10^-8A·m^2/w at the wavelength of 532 nm, the sensitivity of CTIA active pixel structure can reach to 2 243 V/lx · s when the light intensity is 6lx and the integration time is 310 μs. This design indicates that the CTIA active pixel circuit using double-junction PN photodiode has higher sensitivity of photoelectric transfer to weak hght.

关 键 词：荧光传感器 双结深 电容跨阻抗放大器 灵敏度 

分 类 号：TN491[电子电信—微电子学与固体电子学] Q337[生物学—遗传学]