电感耦合等离子体光谱法测定高纯镓中的痕量元素  

Determination of Impurity Elements in High Purity Gallium by Inductively Coupled Plasma Atomic Emission Spectrometry

作　　者：朱连德[1] 刘杰[1] 李瑛琇[1] 陈杭亭[1] 

机构地区：[1]中国科学院长春应用化学研究所国家电化学和光谱研究分析中心,长春130022

出　　处：《分析科学学报》2001年第1期25-28,共4页Journal of Analytical Science

摘　　要：比较了乙醚和甲基异丁基酮 ( MIBK)两种萃取剂对高纯镓中基体与杂质的分离效果。选择 MIBK作为萃取剂 ,将高纯镓中的基体元素镓萃入有机相 ,绝大多数金属杂质则留在水相中 ,用电感耦合等离子体发射光谱法测定了水溶液中的 1 4种痕量元素。方法的加标回收率为 80 %～ 1 1 0 % ,检出限在 0 .0 0 1～ 0 .0 75μg/ms: Two kinds of extraction reagents, methyl isobutyl ketone (MIBK) and ether were compared according to their efficiency of separation of impurities from high purity gallium matrix and MIBK was selected as the extraction reagent. The matrix element was extracted into organic phase. Most of the impurities in aqueous solution were determined by inductively coupled plasma atomic emission spectrometry. The standard addition recovery was 80%~110% and the detection limits were in the range of 0.001~0.075 μg/mL.

关 键 词：电感耦合等离子体发射光谱 溶剂萃取 高纯镓 痕量元素 测定方法 半导体材料 

分 类 号：TN304.1[电子电信—物理电子学] TN304.07