The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2  

作　　者：Michele Buscema Gary A. Steele Herre S. J. van der Zant &ndres Castellanos-Gomez 

机构地区：[1]Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands

出　　处：《Nano Research》2014年第4期561-571,共11页纳米研究（英文版）

摘　　要：We quantitatively study the Raman and photoluminescence （PL） emission from single-layer molybdenum disulfide （MoS2） on dielectric （SiO2, hexagonal boron nitride, mica and the polymeric dielectric Gel-Film） and conducting substrates （Au and few-layer graphene）. We find that the substrate can affect the Raman and PL emission in a twofold manner. First, the absorption and emission intensities are strongly modulated by the constructive/destructive interference within the different substrates. Second, the position of the Alg Raman mode peak and the spectral weight between neutral and charged excitons in the PL spectra are modified by the substrate. We attribute this effect to substrate-induced changes in the doping level and in the decay rates of the excitonic transitions. Our results provide a method to quantitatively study the Raman and PL emission from MoSa-based vertical heterostructures and represent the first step in ad hoc tuning the PL emission of 1L MoS2 by selecting the proper substrate.

关 键 词：molybdenum disulfide van der Waalsheterostructures Raman microscopy photoluminescenceenhancement photoluminescencequenching substrate effect 

分 类 号：TN204[电子电信—物理电子学] O484.41[理学—固体物理]