Epitaxial thin film of SmFeO_3 ferroelectric heterostructures  被引量:3

Epitaxial thin film of SmFeO_3 ferroelectric heterostructures

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作  者:SI WenZhe HUANG KeKe WU XiaoFeng FENG ShouHua 

机构地区:[1]State Key Laboratory of Inorganic Synthesis and Preparative Chemistry,College of Chemistry,Jilin University

出  处:《Science China Chemistry》2014年第6期803-806,共4页中国科学(化学英文版)

基  金:supported by the National Natural Science Foundation of China(90922034,21131002,and 21201075);the Specialized Research Fund for the Doctoral Program of Higher Education(20110061130005)

摘  要:Epitaxial growth of SmFeO3/SrRuO3 was achieved on SrTiO3 substrates by the pulsed laser deposition(PLD)method at 973 K under oxygen partial pressure of 12.5 Pa.No Fe2+leakage was detected in our SmFeO3 film.The remanent polarization and coercive electric field of the thin film with a higher degree of orientation along(110)were 1.97μC/cm2 and 0.89×104 V/cm at room temperature,respectively.This film showed enhanced canted antiferromagnetism spin ordering compared with its corresponding powder materials.Epitaxial growth of SmFeO3/SrRuO3 was achieved on SrTiO3 substrates by the pulsed laser deposition(PLD)method at 973 K under oxygen partial pressure of 12.5 Pa.No Fe2+leakage was detected in our SmFeO3 film.The remanent polarization and coercive electric field of the thin film with a higher degree of orientation along(110)were 1.97μC/cm2 and 0.89×104 V/cm at room temperature,respectively.This film showed enhanced canted antiferromagnetism spin ordering compared with its corresponding powder materials.

关 键 词:ferroelectric materials thin films solid-oxide 

分 类 号:O611.4[理学—无机化学]

 

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