FeCoB基薄膜微波噪声抑制器的传导噪声抑制特性研究  

Study on the conducted-noise suppression property of FeCoB based microwave noise suppressor

作　　者：邱景[1] 

机构地区：[1]重庆大学光电工程学院传感器与仪器研究中心,重庆400044

出　　处：《功能材料》2014年第3期33-36,41,共5页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(61203215);重庆市自然科学基金资助项目(cstc2012jjA40009)

摘　　要：为了获得高性能的微波噪声抑制器,采用射频磁控溅射工艺制备了FeCoB基薄膜微波噪声抑制器,并用微带线法测试了其传导噪声抑制特性。研究了薄膜噪声抑制器的工艺参数和几何尺寸对其传导噪声抑制特性的影响。结果表明,合适的低氩气压有利于其噪声抑制性能的提高;通过控制FeCoB基薄膜和SiO2介质层的几何尺寸,可以实现对其微波噪声抑制性能的连续可调,这主要归因于软磁薄膜的铁磁共振损耗和涡流损耗。制备的FeCoNiB薄膜(长25mm,宽10mm,厚250nm)微波噪声抑制器在3.4GHz时的信号传输功率损耗比Ploss/Pin达到75%。结果表明,该FeCoB基薄膜微波噪声抑制器可应用于GHz频段抗电磁干扰中。To develop high performance microwave noise suppressor,the microwave noise suppressor based on a microstrip line using FeCoB based magnetic thin film were presented,whose noise suppression effects have been investigated.Effects of RF noise suppression on the process parameter and geometric dimension of noise sup-pressors were investigated.It was found that suitable low argon pressure was beneficial to the improvement of microwave noise suppression.In addition,the microwave noise suppression properties of RF noise suppressor could be tuned by controlling the geometric dimension of FeCoB based magnetic thin film and SiO 2 dielectric layer,resulted from the FMR loss and eddy current loss.The P loss/P in of FeCoNiB thin film noise suppressor （length was 25 mm,width was 10 mm,thickness was 250 nm）reached 75% at 3.4 GHz.These results showed that the presented film noise suppressors had potential for use the EMI design in the GHz frequency range.

关 键 词：噪声抑制器 磁性薄膜 微带线 信号衰减 铁磁共振频率 

分 类 号：O484[理学—固体物理]