ZnO过渡层对Au/Hg_3In_2Te_6肖特基接触特性的影响研究  

Study on the Effect of ZnO Interlayer on the Au/Hg_3In_2Te_6 Schottky Contact Characteristics

作　　者：刘淙元 傅莉[1] 李亚鹏[1] 王晓珍[1] 

机构地区：[1]西北工业大学材料学院凝固技术国家重点实验室,西安710072

出　　处：《人工晶体学报》2014年第5期1055-1060,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51172185);西北工业大学研究生创业种子基金(Z2013016)

摘　　要：利用脉冲激光沉积技术在Hg3In2Te6晶体表面制备ZnO过渡层,并对ZnO过渡层进行了表征。结合X射线光电子能谱深度剖析对ZnO/Hg3In2Te6界面元素的化合态进行研究,并通过半导体参数分析仪对Au/ZnO/Hg3In2Te6肖特基接触电学特性进行测试。研究结果表明,采用本实验条件可在Hg3In2Te6晶体表面获得结晶度高、表面粗糙度低,且沿(002)晶面择优生长的ZnO过渡层。同时,ZnO过渡层的引入使Au/Hg3In2Te6肖特基接触的漏电流降低一个数量级,势垒高度提高6.5%。这种现象可能是由于ZnO/Hg3In2Te6界面存在的互扩散使O原子占据了Hg原子空位,从而降低耗尽层中能级缺陷而引起。ZnO interlayer was deposited on the Hg3In2Te6 wafer surface by pulsed laser deposition method in this paper, then it was characterized. The chemical state of the interface was analyzed by X-ray photoelectron spectroscopy, and the effect of the ZnO interlayer on the Au/Hg3In2Te6 Schottky contact characteristics was studied by semiconductor parameter analyzer. The results showed that, the ZnO interlayer grows along （002） crystal face preferentially with low roughness and high crystallinity in this experimental condition. From the I-V test, it can be obtained that the leakage current decreases one order of magnitude by introducing ZnO interlayer, and the Schottky barrier height of Au/ZnO/Hg3In2Tes contact increases by 6.5%. It can be interpreted that ZnO/Hg3In2Te6 interface interdiffusion exists so that Hg atom vacancies are occupied by O atoms, which leads to the decrease of defect level in the depletion layer.

关 键 词：AU Hg3In2Te6 ZnO过渡层 肖特基势垒 

分 类 号：TN304.2[电子电信—物理电子学]