Recovery of high purity silicon from SoG crystalline silicon cutting slurry waste  

太阳能晶体硅切割废料中高纯硅的提取(英文)

作　　者：李大刚[1] 邢鹏飞[1] 庄艳歆[1,2] 李峰[1] 涂赣峰[1] 

机构地区：[1]东北大学材料与冶金学院,沈阳110819 [2]东北大学材料电磁过程教育部重点实验室,沈阳110819

出　　处：《Transactions of Nonferrous Metals Society of China》2014年第4期1237-1241,共5页中国有色金属学报（英文版）

基　　金：Project (51074043) supported by the National Natural Science Foundation of China;Project (2011BAE03B01) supported by the National Technology Support Program of China;Project (N120409004) supported by the Fundamental Research Funds for Central Universities,China

摘　　要：The composition and size distribution of cutting waste were characterized. The Si-rich powders were obtained from the cutting waste using a physical sedimentation process, and then further purified by removing impurity using acid leaching. The effects of process parameters such as acid leaching time, temperature and the ratio of solid to liquid on the purification efficiency were investigated, and the parameters were optimized. Afterwards, the high-purity Si ingot was obtained by melting the Si-rich powders in vacuum furnace. Finally, the high purity Si with 99.96%Si, 1.1×10^-6 boron （B）, and 4.0×10^-6 phosphorus （P） were obtained. The results indicate that it is feasible to extract high-purity Si, and further produce SoG-Si from the cutting slurry waste.研究从太阳能晶体硅切割废料中制取高纯硅。分析切割废料的组成、粒度分布等,利用物理沉降法对废料中的硅粉进行富集,然后经酸洗除杂。研究酸洗工艺参数如酸洗时间、温度、固液比等对提纯效率的影响,并优化工艺参数。最后将酸洗除杂的硅富集料进行真空高温熔炼获得含99.96%Si、1.1×10-6B及4.0×10-6P(质量分数)的高纯硅。结果表明:从晶体硅切割废料中回收太阳能多晶硅是未来的一个重要发展方向。

关 键 词：SoG-Si cutting slurry waste high-purity Si RECOVERY physical sedimentation high temperature melting 

分 类 号：TM914.4[电气工程—电力电子与电力传动]