低温烧结Ba_3(VO_4)_2-xZnMoO_4微波介质陶瓷研究  

Study on Ba_3(VO_4)_2-xZnMoO_4 Microwave Dielectric Ceramics Sintered at Low Temperature

作　　者：高彬[1] 杨青慧[1] 张怀武[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《压电与声光》2014年第3期455-457,共3页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(61021061;51272036;51002021);国家"九七三"基金资助项目(2012CB933104)

摘　　要：采用固相反应法制备了Ba3(VO)4-xZnMoO4陶瓷,研究不同ZnMoO4含量对Ba3(VO)4微观结构及介电性能的影响。X线衍射(XRD)测试结果表明,二者兼容性良好,无第二相产生;具有低熔点及相反(负)频率温度系数的ZnMoO4能有效降低Ba3(VO)4的烧结温度,同时调节温度稳定性。当x=8%(质量分数)时,所制陶瓷烧结温度约850℃,相对介电常数εr≈13,品质因数Q×f≈26 400GHz,谐振频率温度系数τf≈+3μ℃-1。The Ba3 （VO4）2-xZnMoO4 ceramics have been prepared by the conventional soli-state reaction method and the effects of different contents of ZnMoO4 on the microwave dielectric properties and the microstructures of Ba3（VO4）2-xZnMoO4 compound ceramics have been investigated. The X-ray diffraction （XRD） test results indicated that Ba3 （VO4）2 and ZnMoO4 phase coexist in the composite, and no secondary phases can be detected, having a good compatibility. The near-zero temperature coefficients of the resonant frequency （τf） could be achieved by adjusting the relative content of the two phases owing to their opposite rl values. When x= 8 %, the sintered temperature of prepared ceramics reduced to 850 ℃ and exhibited desirable microwave dielectric properties of the quality factor Q×f≈26 400 GHz, dielectric constant εr≈13, and resonant-frequency-temperature coefficient of τf≈＋3μ℃^-1.

关 键 词：Ba3(VO4)2 ZnMoO4 微波介质陶瓷 低温烧结 介电性能 谐振频率温度系数 

分 类 号：TQ174.756[化学工程—陶瓷工业]