低温三步法制备柔性CIGS太阳电池  

Flexible CIGS solar cells prepared by three-stage process at low temperature

作　　者：许楠[1] 胡占宁[1] 张嘉伟[2] 连文娟[1] 薛玉明[2] 

机构地区：[1]天津工业大学理学院,天津300387 [2]天津理工大学电子信息工程学院天津市薄膜电子与通信器件重点实验室,天津300384

出　　处：《电源技术》2014年第6期1075-1077,共3页Chinese Journal of Power Sources

摘　　要：以聚酰亚胺(PI)为衬底的柔性铜铟镓硒[Cu(In,Ga)Se2,简称CIGS]太阳电池因其极高的质量比功率受到广泛的关注与研究。采用低温"三步法"共蒸发工艺制备吸收层CIGS薄膜,在第二步时薄膜会经历富Cu的生长过程,并通过拉曼检测到CuxSe生成。通过X射线衍射光谱法(XRD)分析CIGS薄膜晶体结构,薄膜择优取向呈现为(220)/(204)晶向。扫描电子显微镜(SEM)分析发现CIGS薄膜颗粒大且致密。在PI衬底上制备的CIGS薄膜太阳电池的转换效率达到6.57%。Flexible Cu （In,Ga）Se2（CIGS） solar cells based on polyimide substrate have attracted more attentions and researches because of its high specific power by weight. The CIGS thin films of absorption layer were deposited by using ＂three-stage process＂ co-evaporation at low temperature. The thin films would go through the Cu-rich growth process at the second stage, and CurSe was detected by Ramon spectrum. The crystal structure of the film was analyzed by XRD. The preferred orientation of CIGS films exhibits （220）/（204） crystal odentation It can be found that CIGS thin films form large and intensive grains through SEM analysis. The conversion efficiency of prepared CIGS thin film solar cells is up to 6.57% on PI substrate.

关 键 词：三步法 CIGS薄膜 柔性衬底 太阳电池 

分 类 号：TM914[电气工程—电力电子与电力传动]