Confined and Interface Phonons in Chirped GaAs-A1GaAs Superlattices  

作　　者：胡永正 刘峰奇 王利军 刘俊岐 王占国 

机构地区：[1]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

出　　处：《Chinese Physics Letters》2014年第6期132-135,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 61274094, the National Basic Research Program of China under Grant Nos 2013CB632803 and 2013CB632801, and the National Scientific Instrument Developing Project of China under Grant No 2011YQ13001802-04.

摘　　要：The confined longitudinal optical, transverse optical and interface phonon modes in chirped GaAs-AIGaAs superlattices grown on the （O01）-oriented GaAs substrate are studied by the micro-Raman spectroscopy. The phonon modes are probed at the （001） and （110） faces. The temperature dependence of the longitudinal optical, transverse optical and interface phonon modes are achieved. The temperature dependence of the longitudinal optical phonon frequencies demonstrates that a tensile strain exists in the GaAs layers of the chirped superlattices, which is significant for analyzing the device failure of a terahertz quantum cascade laser.The confined longitudinal optical, transverse optical and interface phonon modes in chirped GaAs-AIGaAs superlattices grown on the （O01）-oriented GaAs substrate are studied by the micro-Raman spectroscopy. The phonon modes are probed at the （001） and （110） faces. The temperature dependence of the longitudinal optical, transverse optical and interface phonon modes are achieved. The temperature dependence of the longitudinal optical phonon frequencies demonstrates that a tensile strain exists in the GaAs layers of the chirped superlattices, which is significant for analyzing the device failure of a terahertz quantum cascade laser.

分 类 号：TN929.11[电子电信—通信与信息系统] O471.1[电子电信—信息与通信工程]