Synthesis of Homogenous Bilayer Graphene on Industrial Cu Foil  

作　　者：骆文刚 汪华锋 蔡凯明 韩文鹏 谭平恒 胡平安 王开友 

机构地区：[1]State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 [2]Key Lab of Microsystem and Microstructure, Harbin Institute of Technology, Ministry of Education, Harbin 150080

出　　处：《Chinese Physics Letters》2014年第6期162-166,共5页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant Nos 2014CB643903 and 2011CB922200, the National Natural Science Foundation of China under Grant Nos 10974196 and 61225021, and the 100-Talents Program of Chinese Academy of Sciences.

摘　　要：We synthesize the homogenous graphene films on cheap industrial Cu foils using low pressure chemical vapor deposition. The quality and the number of layers of graphene are characterized by Raman spectra. Through carefully tuning the growth parameters, we find that the growth temperature, hydrocarbon concentration and the growth time can substantially affect the growth of high-quality graphene. Both single and bilayer large size homogenous graphenes have been synthesized in optimized growth conditions. The growth of graphene on Cu surface is found to be self ceasing in the bilayer graphene process with the low solubility of carbon in Cu. Furthermore, we have optimized the transfer process, and clear graphene films almost free from impurity are suc- cessfully transferred onto Si/SiO2 substrates. The field effect transistors of bilayer graphene are fabricated, which demonstrates a maximum hole （electron） mobility of 4300 cm^2 V- l s-1 （1920 cm^2 V^-1 s^-1） at room temperature.We synthesize the homogenous graphene films on cheap industrial Cu foils using low pressure chemical vapor deposition. The quality and the number of layers of graphene are characterized by Raman spectra. Through carefully tuning the growth parameters, we find that the growth temperature, hydrocarbon concentration and the growth time can substantially affect the growth of high-quality graphene. Both single and bilayer large size homogenous graphenes have been synthesized in optimized growth conditions. The growth of graphene on Cu surface is found to be self ceasing in the bilayer graphene process with the low solubility of carbon in Cu. Furthermore, we have optimized the transfer process, and clear graphene films almost free from impurity are suc- cessfully transferred onto Si/SiO2 substrates. The field effect transistors of bilayer graphene are fabricated, which demonstrates a maximum hole （electron） mobility of 4300 cm^2 V- l s-1 （1920 cm^2 V^-1 s^-1） at room temperature.

分 类 号：TN304.054[电子电信—物理电子学] TQ127.11[化学工程—无机化工]