Structure Dependence of Magnetic Properties for Annealed GaMnN Films Grown by MOCVD  

作　　者：姜显哲 杨学林 纪骋 邢海英 杨志坚 王存达 于彤军 张国义 

机构地区：[1]State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 [2]School of Electronics and Information Engineering, Tianjin Polytechnic University, Tianjin 300387

出　　处：《Chinese Physics Letters》2014年第6期203-206,共4页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grants Nos 2013CB328705 and 2011CB013101, and the National Natural Science Foundation of China under Grants Nos 61306110, 61327801, 61376012, 61204008, and 11204209.

摘　　要：GaMnN/GaN multilayers and conventional GaMnN single layers are grown by metal-organic chemical vapor deposition. Both kinds of samples show room-temperature ferromagnetism. After thermal annealing, the sample with GaMnN/GaN multilayer structure displays a larger coercivity and better thermal stability compared to the GaMnN single layer. The annealing effects on Vca related defects are observed from photoluminescenee measurements. Moreover, a different magnetic behavior is also found in the annealed GaMnN films grown on different （n-type GaN and p-type GaN） templates. These kinds of structure-dependent magnetic behaviors indicate that defects or carriers transformation introduced during annealing may have important effects on the electronic structure of Mn ions and on the ferromagnetism. Our work may be helpful for further understanding the origin of ferromagnetism in GaN-based diluted magnetic semiconductors.GaMnN/GaN multilayers and conventional GaMnN single layers are grown by metal-organic chemical vapor deposition. Both kinds of samples show room-temperature ferromagnetism. After thermal annealing, the sample with GaMnN/GaN multilayer structure displays a larger coercivity and better thermal stability compared to the GaMnN single layer. The annealing effects on Vca related defects are observed from photoluminescenee measurements. Moreover, a different magnetic behavior is also found in the annealed GaMnN films grown on different （n-type GaN and p-type GaN） templates. These kinds of structure-dependent magnetic behaviors indicate that defects or carriers transformation introduced during annealing may have important effects on the electronic structure of Mn ions and on the ferromagnetism. Our work may be helpful for further understanding the origin of ferromagnetism in GaN-based diluted magnetic semiconductors.

分 类 号：TN304.23[电子电信—物理电子学] O482.5[理学—固体物理]