CdS多晶薄膜的制备及其性能  

Preparation and Properties of CdS Polycrystalline Thin Films

作　　者：陈晓东[1] 武卫兵[1] 陈宝龙[1] 张楠楠[1] 

机构地区：[1]济南大学材料科学与工程学院,山东济南250022

出　　处：《济南大学学报（自然科学版）》2014年第5期382-385,共4页Journal of University of Jinan(Science and Technology)

基　　金：山东省自然科学基金(ZR2010EZ003)

摘　　要：采用化学水浴法（CBD）及85—65℃的高低温工艺模式，在醋酸镉体系中制备大面积硫化镉CdS多晶薄膜，经X射线衍射仪（XRD）、场发射扫描电子显微镜（FESEM）和紫外-可见分光光度计（UV-VIS）等测试表征CdS多晶薄膜结构、形貌及光学性质。结果表明：CdS在85℃条件下快速成核，再逐渐降温至65℃慢速生长，可使大面积CdS多晶薄膜的粒径较大（约60nm）、均匀性较好、致密度较高。通过优化85℃到65℃的高低温生长工艺，降温速率为2％／min的条件下制备出厚度约50nm的超薄CdS多晶薄膜，经氮气气氛400oC退火处理后，CdS晶粒长大，透过率降低，禁带宽度变窄。The polycrystalline CdS thin films were deposited with a chemical bath method （CBD） by gradually lowering the solu- tion temperature from 85 ℃ to 65 ℃ in a cadmium acetate system. The structure, morphology and optical properties of the CdS thin films were tested through XRD, FESEM, UV-VIS. The experiments demonstrated that CdS film experiencs a fast nucleation stage at 85 ℃ and then grows slowly with temperature gradually reducing to 65 ℃ ,which makes the CdS film has large grain size （ about 60 nm） , good uniformity and high density. By optimizing the growth process from high temperature （ 85 ℃ ） to low temperature （ 65 ℃ ） , ultrathin CdS polycrystalline films of 50 nm are obtained at the cooling rate of 2 ℃/min. After annealing at 400 ℃ in N2 atmosphere, the grains of CdS grow up, its transmittance decreases and its band gap narrows.

关 键 词：化学水浴法 高低温模式 CDS薄膜 CdTe太阳能电池 

分 类 号：O782.1[理学—晶体学]