ICP-AES法测定太阳能级硅中磷等12种痕量杂质元素  

Determination of P,Fe,Al,Ca,Mg,Zn,Cu,Cr,Ni,Mn,Ti,Zr impurities in solar grade silicon by inductively coupled plasma atomic emission spectrometry

作　　者：孙东亚[1] 何丽雯[2] 谢安[1] 

机构地区：[1]厦门理工学院材料科学与工程学院,厦门361024 [2]华侨大学材料科学与工程学院,厦门361021

出　　处：《分析试验室》2014年第7期855-859,共5页Chinese Journal of Analysis Laboratory

摘　　要：用电感耦合等离子体原子发射光谱仪（ICP-AES）测定太阳能级硅（SOG-Si）中磷等12种杂质元素。实验发现,在150℃时,用HF和HNO3的混合溶液,试样在PFA烧杯中能较快溶解。在1000级洁净室中,用金属氧化物半导体（MOS）级试剂溶解电子级硅（EG-Si,纯度大于9N）可控制样品空白中各元素的含量均小于1μg/L,并能较好的补偿基体效应。在选定仪器工作条件下,被测元素检出限为5～50 ng/mL,回收率在93%～105%,相对标准偏差RSD≤9.8%（n=11）。测定结果与电感耦合等离子体原子发射质谱（ICP-MS）法及辉光放电质谱（GDMS）法进行了比对,结果吻合。The 12 trace impure elements of P etc in solar grade silicon（SOG-Si） were determined by inductively coupled plasma atomic emission spectrometry（ICP-AES） in this paper.The silicon sample was dissolved in nitric acid and hydrofluoric acid under heated in PFA container at about 150 ℃.EG-Si was dissolved by reagent of metal oxide semiconductor（MOS） level in class 1000 clean room,so the impurities in sample blank was less than 1 μg/L and the silicon matrix effect can be partly reduced.Under the optimal conditions of instrument,the detection limits of method were from 5 to 50 ng/mL（3（） and the recoveries were 93% ～105% with the relative standard deviation（RSD） of no more than 9.8%（n =11）.The found results were consistent with those obtained by inductively coupled plasma mass spectrometry（ICP-MS） and glow discharge mass spectrometry（GDMS）.

关 键 词：电感耦合等离子体原子发射光谱仪 太阳能级硅 洁净室 杂质元素 

分 类 号：O657.3[理学—分析化学]