ZrB_2体材及薄膜制备技术研究  

Synthesis and Characterization of ZrB_2 Target and Thin Film Materials

作　　者：刘朋闯[1] 庞晓轩[1] 王庆富[1] 张鹏程[1] 李强[1] 王志刚 

机构地区：[1]中国工程物理研究院材料研究所,绵阳621900 [2]中核包头核燃料元件股份有限公司,包头014035

出　　处：《真空科学与技术学报》2014年第6期636-639,共4页Chinese Journal of Vacuum Science and Technology

基　　金：中国工程物理研究院科学技术发展基金项目(2012B0302048)

摘　　要：采用冷等静压成型结合高温烧结的方法制备ZrB2体材,并用磁控溅射方法在UO2芯块表面制备出ZrB2薄膜。利用X射线衍射、扫描电子显微镜、X射线能谱对烧结体及膜层的物相、形貌和成分进行了表征。采用热循环冲击的方法测试膜基结合性能。结果表明,所制体材能够满足磁控溅射制备ZrB2薄膜的需求。体材和膜层均为单相ZrB2,ZrB2薄膜生长均匀、致密且与基体有着良好的结合性能,膜层可以承受80℃到600℃快速升降温5次的热循环而仍然与基体紧密结合。The high purity bulk ZrB2 ceramics, synthesized by cold isostatic pressing and high temperature sintering, was used as the target to deposit the ZrB2 thin filmson UO2 pelletsubstrate by magnetron sputtering. The impacts of the synthesis conditions, including the grain size and sintering temperature, on compactness and uniformity of bulk ZrB2 were evaluated. The ZrB2 bulk and films were characterized with scanning electron microscope, X-ray diffraction, and energy dispersive spectrometry. Besides, adhesion strength at the ZrB2/UO2 interface was estimated by thermal shock test. The re- suits show that the single-phased bulk ZrB2 is a good target material, and that the compact uniform ZrB2 films, deposited on UO2 substrate, well sustained a thermal shock from 80 ℃ to 600℃ for five times without any observable crack or peeling off.

关 键 词：ZRB2 体材 薄膜 结合性能 

分 类 号：O484.1[理学—固体物理] TB43[理学—物理]