静压触媒法制备的人造金刚石中的晶体缺陷  

Crystal Defects in Synthetic Diamond Prepared by Static Catalyst Method

作　　者：尹龙卫[1] 李木森[1] 陈芝[2] 孙东升 董秀梅 郑培智 

机构地区：[1]山东大学材料与工程学院,济南250061 [2]济南永宁制药有限公司,济南240012 [3]潍坊劳动局第二技工学校,潍坊261031

出　　处：《人工晶体学报》2001年第1期105-108,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金!重点资助项目 (5 96 310 6 0 ) ;国家教委青年教师基金!资助项目 (光明日报 ;1998;4;4公布 )

摘　　要：本文首次采用透射电子显微术系统地研究了由FeNi触媒制备的金刚石单晶的微观结构 ,分析了人造金刚石中存在的晶体缺陷 ,探讨了这些晶体缺陷形成的原因。研究发现金刚石中存在层错、棱柱位错、位错列和位错网络等晶体缺陷。研究结果表明 ,金刚石中的晶体缺陷与金刚石的高温高压合成过程密不可分 ,主要起源于金刚石中大量过饱和的空位和微观杂质所引起的内应力。Transmisson electron microscopy (TEM) has been used to investigate the microstructures and analyze the defects in synthetic diamond prepared under high temperature high pressure in the presence of FeNi alloy catalyst.It was found that there exist prismatic dislocations,stacking faults,array of dislocations and dislocation network.The formation mechanism of these defects was studied.Results show that defects in the diamond were closely related to high temperature high pressure synthesis process and originated mainly from excess amount of saturated vacancies and internal stress generated by micro inclusions.

关 键 词：人造金刚石 棱柱位错 层错 位错网络 静压触媒法 制备 晶体缺陷 

分 类 号：TQ164.8[化学工程—高温制品工业] O772[理学—晶体学]