CuInSe_2薄膜的化学溶液制备方法  

Preparation of CuInSe_2 thin films by a chemical solution method

作　　者：朱晓晶 马建华[1,2] 姚娘娟 梁艳 江锦春 王善力 褚君浩 

机构地区：[1]中科院上海技术物理研究所红外物理国家重点实验室,上海200083 [2]上海太阳能电池研究与发展中心,上海201201

出　　处：《红外与毫米波学报》2014年第3期231-236,共6页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(青年科学基金)项目(61006092)~~

摘　　要：采用了一种低成本化学溶液法制备铜铟硒(CuInSe_2,CIS)薄膜.研究了预退火温度、硒化温度及基片衬底等实验参数对材料性能的影响.采用硝酸铜和氯化铟配置前驱体溶液,旋涂法制膜,后经480℃硒化退火得到CIS薄膜.XRD测试结果表明薄膜结晶性良好,具黄铜矿结构;SEM测试结果显示薄膜由较大晶粒组成,表面相对平整致密;EDX测试显示薄膜组分相对合理,略贫Cu而富Se.采用此薄膜为吸收层制备CIS原型薄膜太阳能电池,其光电测试显示单层CIS光伏响应达到1.6%.A low cost chemical solution method for the preparation of CuInSe2 thin films was proposed. The changes of film properties were studied, which were caused by several parameters of the experiments, including the annealing temperature of the precursor films, the annealing temperature for selenization and different substrates. Copper nitrate and indium chloride were used to prepare the precursor solution. The precursor films were processed by the spin-coating method from the solution, and then selenized at 480℃ to obtain CIS thin films. XRD results show chalcopyrite structure with high crystallinity. SEM images show large grains and relatively smooth and dense surface. EDX analysis results indicate that the ratios of components were in a reasonable range, slightly poor in copper and rich in selenium. The sample films were sandwiched into CIS prototype solar cells as the absorbing layer. The photovoltaic response of a single CIS layered cell reaches 1.6%.

关 键 词：铜铟硒薄膜 黄铜矿结构 化学溶液法 太阳能电池 

分 类 号：O484.1[理学—固体物理]