串列加速器装置的功能扩展  

Extended Function of the Tandem Accelerator-Implanter System

作　　者：尚艳霞[1] 王泽松[1] 张早娣[1] 张瑞[1] 李慧[1] 周霖[1] 黎明[1,2] 刘家瑞[3] 付德君[1] 

机构地区：[1]武汉大学物理科学与技术学院,湖北武汉430072 [2]中国科学院工程物理研究院,四川绵阳621000 [3]休斯顿大学物理学院,美国德克萨斯州77479

出　　处：《武汉大学学报（理学版）》2014年第3期264-268,共5页Journal of Wuhan University:Natural Science Edition

基　　金：国家自然科学基金资助项目(11105110);科技部合作重大项目(2011DFR50580)资助

摘　　要：通过在2×1.7MV串列加速器前端设计并安装静电扫描装置和靶室,扩展了其0~30keV低能注入和沉积功能.利用低能离子注入的方法分别在Ni/SiO2和铜箔衬底上得到石墨烯薄膜,并运用Raman光谱和扫描电子显微镜研究了样品的形貌、薄膜层数及缺陷等性质.实验结果表明,在铜箔衬底上得到双层石墨烯薄膜.通过调试高能端和200keV注入机联机实验,在双束靶室中得到He,Li,C,N,Fe离子束,用于双束注入和辐照损伤等研究.We modified the low-energy terminal of 2 × 1.7 MV tandem accelerator system by installing electrostatic scanners and implantation substrate holder, which made it possible for ultralow energy implantation and ion beam deposition, ranging from 0 keV to 30 keV. We have prepared graphene on Ni/SiO2 and copper foil by ion implantation. Raman spectra and scanning electron microscopy（SEM） are used to study the number of graphene layers, degree of defects and the morphology of graphene film. The results show that we have obtained double-layer graphene on Cu foil which has lower defect. The tandetron connecting with the 200 keV implanter comprises a dual beam chamber,which produces He,Li,C,N and Fe ion beams. It can be studied on the dual beam implantation and radiation damage.

关 键 词：串列加速器 低能团簇注入 负离子束 双束靶室 石墨烯 

分 类 号：O572.2[理学—粒子物理与原子核物理]