Ion transport-related resistive switching in film sandwich structures  

作　　者：Xiao-Jian Zhu Jie Shang Gang Liu Run-Wei Li 

机构地区：[1]Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences [2]Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences

出　　处：《Chinese Science Bulletin》2014年第20期2363-2382,共20页

基　　金：supported by the National Basic Research Program of China(2009CB933004,2012CB933004);the National Natural Science Foundation of China(51172250,51303194,61328402,61306152);Zhejiang and Ningbo Natural Science Foundations(2013A610031);Science and Technology Innovative Research Team of Ningbo Municipality(2009B21005,2011B82004)

摘　　要：Resistive switching memories based on ion transport and related electrochemical reactions have been extensively studied for years.To utilize the resistive switching memories for high-performance information storage applications,a thorough understanding of the key information of ion transport process,including the mobile ion species,the ion transport paths,as well as the electrochemical reaction behaviors of these ions should be provided for material and device optimization.Moreover,ion transport is usually accompanied by processes of microstructure modification,phase transition,and energy band structure variation that lead to further modulation of other physical properties,e.g.,magnetism,optical emission/absorbance,etc.,in the resistive switching materials.Therefore,novel resistive switching memories that are controlled through additional means of magnetic or optical stimulus,or demonstrate extra functionalities beyond information storage,can be made possible via well-defined ion transportation in various switching materials and devices.In this contribution,the mechanism of ion transport and related resistive switching phenomena in thin film sandwich structures is discussed first,followed by a glanceat the recent progress in the development of high-performance and multifunctional resistive switching memories.A brief perspective of the ion transport-based resistive switching memories is addressed at the end of this review.Resistive switching memories based on ion transport and related electrochemical reactions have been extensively studied for years. To utilize the resistive switching memories for high-performance information storage applications, a thorough understanding of the key information of ion transport process, including the mobile ion species, the ion transport paths, as well as the electrochemical reaction behaviors of these ions should be provided for material and device optimization. Moreover, ion transport is usually accompanied by processes of microstructure modification, phase transition, and energy band structure variation that lead to further modulation of other physical properties, e.g., magnetism, optical emission/absorbance, etc., in the resistive switching materials. Therefore, novel resistive switching memories that are controlled through additional means of magnetic or optical stimulus, or demonstrate extra functionalities beyond information storage, can be made possible via well-defined ion transportation in various switching materials and devices. In this contribution, the mechanism of ion transport and related resistive switching phenomena in thin film sandwich structures is discussed first, followed by a glanceat the recent progress in the development of high-performance and multifunctional resistive switching memories. A brief perspective of the ion transport-based resistive switching memories is addressed at the end of this review.

关 键 词：离子迁移 开关现象 夹层结构 电阻式 薄膜 运输 电化学反应 信息存储 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]