黄色荧光粉CaBi_2Ta_2O_9:Dy^(3+)的制备及发光性能  

Synthesis and Photoluminescence Properties of Yellow-Emitting Phosphors CaBi_2Ta_2O_9:Dy^(3+)

作　　者：李金岚[1] 崔瑞瑞[1] 邓朝勇[1] 

机构地区：[1]贵州大学电子信息学院贵州省电子功能复合材料特色重点实验室,贵州贵阳550025

出　　处：《激光与光电子学进展》2014年第7期115-119,共5页Laser & Optoelectronics Progress

基　　金：贵州省科技计划支持项目(2012-3005;2010-4005;2009-2015;2010-2134;2011-2016);贵阳市科技计划项目(2012101-2-4)

摘　　要：采用高温固相反应法制备了Dy3+掺杂铋层结构铁电氧化物CaBi2Ta2O9(CBTO)荧光粉。分别对样品进行了X射线衍射(XRD)分析、扫描电镜(SEM)测试和荧光光谱(PL)的测定。研究表明:荧光粉CBTO:Dy3+的最强激发峰为450 nm,与商用蓝光LED的发射光波长相匹配,发射带峰值位于574 nm,对应于Dy3+的电偶极跃迁4F9/2→6H13/2。分析了Dy3+摩尔分数对样品发光强度的影响,其最佳摩尔分数为7%,根据Dexter理论分析其浓度猝灭机理为电偶极-电偶极相互作用。分别研究了电荷补偿剂Li+、Na+和K+对CBTO:Dy3+发射光谱的影响,结果显示不同的电荷补偿剂均能不同程度地提高样品的发光强度。Dy^3＋ doped phosphors CaBi2Ta2O9 （CBTO） based bismuth layered-structure oxides is synthesized by high temperature solid- state reaction. The X- ray diffraction （XRD）, scanning electron microscope （SEM） and photoluminesce （PL） properties of the phosphors are investigated, respectively. The study reveals that the strongest excitation peak of CBTO：Dy^3＋ locates at 450 nm, which covers the emission wavelength of the commercial blue LED chips, and that the emission peak at 574 nm corresponds to the electric dipole transition ^4F9/2→^6H13/2 of Dy^3＋ . The luminescent intensity of samples with different concentrations of Dy^3＋ ions is analyzed, and the optimum doped-Dy^3＋ mole fraction is 7%. According to Dexter′s theory, the mechanism of concentration quenching in CBTO：Dy^3＋ should be attributed to the mechanism of multipole-multipole interaction. The influence of charge compensators （Li^＋, Na^＋, K^＋） on the emission spectra of CBTO：Dy^3＋ is studied respectively, and the results display that luminescent intensity of the samples is improved.

关 键 词：材料 铋层结构铁电体 高温固相 白光LED 光致发光 浓度猝灭 电荷补偿剂 

分 类 号：O482.31[理学—固体物理]