门电压调控的ZGNR/AGNR/ZGNR异质结电输运性质研究  

Gate modulation on the Electronic Transport Properties of ZGNR/AGNR/ZGNR heterojunctions

作　　者：刘文[1] 

机构地区：[1]济宁学院物理与信息工程系,山东曲阜273155

出　　处：《济宁学院学报》2014年第3期49-51,共3页Journal of Jining University

基　　金：山东省高等学校科技计划项目(J13LJ53)

摘　　要：采用第一性原理计算方法,研究了门电压调控的ZGNR/AGNR/ZGNR异质结电输运性质,发现,门电压调控对异质结电输运性质有重要影响,表现为先增强再抑制.随着异质结中心区AGNR长度的减小,体系的电流急剧增大.电荷输运能力的增强与异质结的长度和透射谱密切相关.The electronic transport properties of ZGNR/AGNR/ZGNR heterojunctions under gate modulation is investigated within the first-principle method. It is found that the charge transport depend significantly on the gate modulation. With the enhancement of the gate voltages the current increases first and then drops. Moreover, the current increases drastically with the length decrease of the central region.

关 键 词：石墨烯纳米带 电荷输运 门电压 

分 类 号：O469[理学—凝聚态物理]