基于射频场效应管的快速电光调Q驱动电路设计  

Design of High Speed Q-Switch Driver Circuit Based on Radio Frequency Field Effect Transistor

作　　者：张鑫[1] 陈满超 席文强[1] 郑家凤[1] 王捷[1] 

机构地区：[1]华中光电技术研究所-武汉光电国家实验室,湖北武汉430223 [2]延长集团陕西化建工程有限责任公司,陕西西安710003

出　　处：《光学与光电技术》2014年第3期58-61,共4页Optics & Optoelectronic Technology

摘　　要：针对电光Q开关速度快的特点,提出基于射频场效应管电光调Q驱动电路的设计方法。通过选择电磁对称性器件,多个电容并联,元器件及走线空间对称分布以较好的符合电磁对称性要求,使得回路等效电感降低。通过该方法可获得上升沿约16ns,幅度大于5 000V电光调Q开关驱动信号。该研究为高速高压电路设计提供了参考。Aiming at the characteristics of high speed for Q-switch, a novel design method of high speed Qswitch driver circuit based on radio frequency field effect transistor is proposed. The main circuit loop equivalent inductance is reduced by selecting high speed radio frequency field effect transistor, special IC driver, components layout and routing meet electromag- netism syrmnetry. Q-switch drive pulse with rise time about 16ns voltage magnitude more than 5 000 V is obtained by this method. This research provides a reference for the design of high speed high voltage circuit.

关 键 词：电光Q开关 射频场效应管 驱动电流 电磁对称 

分 类 号：TN248[电子电信—物理电子学]