掺杂YAG闪烁晶体研究进展  

Progress on the Research of YAG-based Scintillation Crystals

作　　者：牛雪姣[1,2] 徐家跃[1,2] 

机构地区：[1]上海应用技术学院材料科学与工程学院,上海201418 [2]上海应用技术学院晶体生长研究所,上海201418

出　　处：《材料导报（纳米与新材料专辑）》2014年第1期227-232,共6页

基　　金：国家973前期研究专项(2011CB612310);上海市科委基础研究重点项目(11JC1412400);上海市教委重点学科(J51504)

摘　　要：总结了不同离子掺杂YAG晶体的生长、闪烁特性和Ce∶YAG晶体的发光机理。Yb∶YAG晶体具有非常短的衰减时间(0.98ns),但光产额只有约1190phot/MeV。Ce∶YAG晶体的衰减时间为88ns,光产额可达26000phot/MeV,它具有优良的综合性能,已应用于闪烁探测器和大规模集成电路检测。Gd或Gd/Ga等稀土离子与Ce共掺可进一步提高YAG晶体的闪烁性能,最高光产额达44000phot/MeV,衰减时间为56.9ns。A review of research and development of Y3 Al5 O12 （YAG）-based scintillation crystals were presen-ted, including crystal growth, scintillation performance and luminescent mechanism of Ce ： YAG. Yb ： YAG crystalhas the most shortest decay time of 0. 98 ns while its light yield is about 1190 phot/MeV. The decay time and lightyield of Ce .＂ YAG crystals was about 58 ns and 26000 phot/MeV, respectively. So far, Ce .＂ YAG crystal exhibitsbetter comprehensive performance and has been applied in the field of inspection of large-scale integrated circuits andscintillation detectors. Scintillation crystals Ce .＂ YAG co-doped with Gd or Gd/Ga may result in a very high light yieldof 44000 phot/MeV, and the decay time of 56. 9 ns.

关 键 词：YAG晶体 掺杂 闪烁性能 发光机理 

分 类 号：O799[理学—晶体学]