涂层导体用Ta掺杂CeO_2过渡层的研究（英文）  

Study of Ta-doped CeO_2 Buffer Layer for Coated Conductors

作　　者：刘敏[1] 吕昭[1] 徐燕[1] 叶帅[1] 索红莉[1] 

机构地区：[1]北京工业大学,北京100124

出　　处：《稀有金属材料与工程》2014年第6期1329-1331,共3页Rare Metal Materials and Engineering

摘　　要：采用简单的金属有机物沉积方法在自制的Ni-5W基带上成功地制备了Ta掺杂CeO2过渡层。XPS结果表明:在热处理时的还原性气氛中,Ta5+优先于Ce4+被还原为Ta4+,这有利于减少或抑制由于Ce4+被还原而产生的裂纹和孔洞。XRD结果表明除CeO2的衍射峰稍变小外,没有发现新的物相生成,这说明Ta4+部分取代了CeO2晶格中Ce4+的位置生成了Ce0.75Ta0.25O2.Ce0.75Ta0.25O2的ω-扫描和-扫描半高宽带分别是4.38o和6.67o,这表明Ce0.75Ta0.25O2具有良好的面外和面内织构。AES结果表明单层Ce0.75Ta0.25O2的厚度大约为70 nm,在过渡层的表面没有检测到Ni元素,说明该过渡层具有很好的阻止元素扩散的能力。综上说明,Ta掺杂的CeO2过渡层有望成为涂层导体用单层多功能过渡层。Abstract： Ta-doped CeO2 buffer layers were grown on the home-made textured Ni-5W substrates for YBCO coated conductors by a simple metal-organic deposition technique. The characterization of the samples was discussed. XPS results indicate that Ta^5＋ is reduced into Ta^4＋ prior to Ce^4＋, which is helpful to suppress the formation of holes and cracks in CeO2 films from reducing Ce^4＋ into Ce^3＋. Additionally, no new phase is found by doping Ta into CeO2, which indicates that Ta^4＋ replaces the Ce^4＋ position in CeO2 lattice to form Ce0.75Ta0.25O2. The Ce0.75Ta0.25O2 has a good out-of-plane and in-plane texture FWHM values for to scan and φ scan are 4.38° and 6.67°, respectively. AES measurements show that no Ni element is detected on the surface of Ce0.75Ta0.25O2 film, and a one-layer film has a thickness of about 70 nm. It is promising that the presently developed Ce0.75Ta0.25O2 film can be used as a single multi-functional buffer layer for coated conductor.

关 键 词：CeO2过渡层 掺杂 涂层导体 

分 类 号：TG174.4[金属学及工艺—金属表面处理]