Novel reverse conducting insulated gate bipolar transistor with anti-parallel MOS controlled thyristor  

作　　者：朱利恒 陈星弼 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China

出　　处：《Journal of Semiconductors》2014年第7期48-51,共4页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.51237001);the Fundamental Research Funds for the Central Universities of China(No.E022050205)

摘　　要：Novel reverse-conducting IGBT （RC-IGBT） with anti-parallel MOS controlled thyristor （MCT） is proposed. Its major feature is the introduction of an automatically controlled MCT at the anode, by which the anodeshort effect is eliminated and the voltage snapback problem is solved. Furthermore, the snapback-free characteristics can be realized in novel RC-IGBT by a single cell with a width of 10 μm with more uniform current distribution. As numerical simulations show, compared with the conventional RC-IGBT, the forward conduction voltage is reduced by 35% while the reverse conduction voltage is reduced by 50% at J = 150 A/cm2.Novel reverse-conducting IGBT （RC-IGBT） with anti-parallel MOS controlled thyristor （MCT） is proposed. Its major feature is the introduction of an automatically controlled MCT at the anode, by which the anodeshort effect is eliminated and the voltage snapback problem is solved. Furthermore, the snapback-free characteristics can be realized in novel RC-IGBT by a single cell with a width of 10 μm with more uniform current distribution. As numerical simulations show, compared with the conventional RC-IGBT, the forward conduction voltage is reduced by 35% while the reverse conduction voltage is reduced by 50% at J = 150 A/cm2.

关 键 词：reverse conducting IGBT snapback flee turn-off energy reverse-recovery charge 

分 类 号：TN322.8[电子电信—物理电子学]