A high-speed avalanche photodiode  

作　　者：李彬 杨晓红 尹伟红 吕倩倩 崔荣 韩勤 

机构地区：[1]State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2014年第7期73-77,共5页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.61176053,61274069);the National Key Basic Research and Development Program of China(No.2012CB933503);the National High Technology Research and Development Program of China(Nos.2012AA012202,2013AA031401)

摘　　要：High-speed avalanche photodiodes are widely used in optical communication systems. Nowadays, separate absorption charge and multiplication structure is widely adopted. In this article, a structure with higher speed than separate absorption charge and multiplication structure is reported. Besides the traditional absorption layer, charge layer and multiplication layer, this structure introduces an additional charge layer and transit layer and thus can be referred to as separate absorption, charge, multiplication, charge and transit structure. The introduction of the new charge layer and transit layer brings additional freedom in device structure design. The benefit of this structure is that the carrier transit time and device capacitance can be reduced independently, thus the 3 dB bandwidth could be improved by more than 50% in contrast to the separate absorption charge and multiplication structure with the same size.High-speed avalanche photodiodes are widely used in optical communication systems. Nowadays, separate absorption charge and multiplication structure is widely adopted. In this article, a structure with higher speed than separate absorption charge and multiplication structure is reported. Besides the traditional absorption layer, charge layer and multiplication layer, this structure introduces an additional charge layer and transit layer and thus can be referred to as separate absorption, charge, multiplication, charge and transit structure. The introduction of the new charge layer and transit layer brings additional freedom in device structure design. The benefit of this structure is that the carrier transit time and device capacitance can be reduced independently, thus the 3 dB bandwidth could be improved by more than 50% in contrast to the separate absorption charge and multiplication structure with the same size.

关 键 词：avalanche photodiodes PHOTODETECTOR high speed 

分 类 号：TN312.7[电子电信—物理电子学]